Breakthrough Technology Combines High Performance With Low Losses
Silicon Carbide (SiC) semiconductors provide an innovative option for power electronic designers looking for improved system efficiency, smaller form factor and higher operating temperature in products covering industrial, automotive, medical, aviation and communication market segments. APD next-generation SiC MOSFETs and SiC Junction Barrier Schottky (JBS) are designed with higher repetitive Unclamped Inductive Switching (UIS) capability at rated on-resistance or current. Our SiC MOSFETs maintain high UIS capability at approximately 10–23 Joules Per Square Centimeter (J/cm2) and robust short circuit protection. Our SiC JBS are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, our SiC MOSFET and SiC JBS die can be paired together for use in modules. SiC MOSFET and SiC JBS products from Our will be qualified to the AEC-Q100、101 、104 and AQG324 standard.
Higher voltages & currents
Higher power density
Smaller cooling systems
Reduced switching loss
Low conduction loss
System miniaturization
SiC Schottky Diodes
Significantly lower switching loss
SiC MOSFETs
High speed switching with low On-resistance
IGBTs
High-efficiency power control with low losses
SiC Power Modules
Switching losses reduced by up to 75%
If you have any customization needs, feel free to contact us.