▍High-efficiency power control with low losses
The Insulated Gate Bipolar Transistor (IGBT) combines the high switching speed of a MOSFET with the low conduction losses of a bipolar transistor, making it particularly suited for high-power applications such as electric vehicle drive systems and inverters. The IGBT's exceptional performance remains stable under high voltage and current conditions, significantly enhancing system efficiency while reducing cooling requirements. This contributes to the development of smaller and lighter end-product designs.
Electrical Features
- High Current density
- Low VCEsat
- Low Switching Losses
- Low Qg and Cres
- Low Inductive Design
- Tvj op = 150°C
- Short-time extended Operation Temperature
Mechanical Features
- 4.2kV DC 1sec Insulation
- High Creepage and Clearance Distances
- Compact design
- High Power Density
- Direct Cooled Base Plate
- Guiding elements for PCB and cooler assembly
- Integrated NTC temperature sensor
- RoHS compliant
- UL 94 V0 module frame
| VCES | ICN | VGE | Package | ||
|---|---|---|---|---|---|
| AIG400N075AHBP | 750 | 400 | ±20 | -40 ~ +175 | HPD-PACK |
| AIG600N075AHBP | 750 | 600 | ±20 | -40 ~ +175 | HPD-PACK |
| AIG820N075AHBP | 750 | 820 | ±20 | -40 ~ +175 | HPD-PACK |
| AIG400N120AHBP | 1200 | 400 | ±20 | -40 ~ +175 | HPD-PACK |
| AIG600N120AHBP | 1200 | 600 | ±20 | -40 ~ +175 | HPD-PACK |
If you have any customization needs, feel free to contact us.