Advanced Power Device

▍碳化矽 MOSFET,高速開關,低導通電阻。

碳化矽MOSFET可實現同時高速開關和低導通電阻,這對於矽基MOSFET產品來說通常是不可能的。碳化矽MOSFET特徵包括高溫下卓越的電氣特性和顯著降低的開關損耗,從而使外圍電路元件體積更小。

特徵
  • APD A3+技術 VGS +25V
  • 低輸入電容(Ciss)
  • 降低開關和傳導損耗
  • 超低閘極電荷 (Qg)
  • 額定雪崩能量 (UIS)
  • 快速切換能力
  • 改進的 dv/dt 能力
應用
  • 新能源汽車-超級充電站
  • 開關模式電源
  • 功率因數校正電源
  • 工業馬達驅動
  • 感應焊接
  • 風力渦輪機逆變器
  • 太陽能光電逆變器

APD
Part Number
ID (A)
Tc=25℃
Voltage (V)RDS(ON)
Typical
VGS(th)Ciss (pF)Coss (pF)Crss (pF)Qg (nC)Qgs (nC)Qgd (nC)PackageAEC-Q101 Qualified
ASM030N065PT70650301.8/2.8/3.6255023061073140TO-247-3
ASM030N065PT470650301.8/2.8/3.6255023061073140TO-247-4
ASM045N065PT51650451.8/2.7/3.617701507752228TO-247-3
ASM045N065PT451650451.8/2.7/3.617701507752228TO-247-4
ASM060N065PT42650601.8/2.8/3.613401157581722TO-247-3
ASM060N065PT442650601.8/2.8/3.613401157581722TO-247-4
ASM012N075ACTB714575011.62.0/2.7/3.74465335282175683TO-263-7
ASM054N075PT437750542.0/2.8/3.61265815571623TO-247-4
ASM007N120TPAK212120072.0/2.6/3.61262055045515160190T-PAK
ASM014N120PT41361200142.0/2.8/3.76385255172557596TO-247-4
ASM015N120APT41261200152.0/2.8/3.74300214192225588TO-247-4
ASM020N120PT41051200201.9/2.5/3.84470216162396278TO-247-4
ASM028N120PT462120028– /2.0/3.024301069.41071728TO-247-4
ASM030N120PT4691200301.8/2.8/3.73070130101303755TO-247-4
ASM039N120PT4501200392.0/2.8/3.71950888932335TO-247-4
ASM040N120CTB7481200401.8/2.6/3.72300967992839TO-263-7
ASM040N120PT4541200401.8/2.8/3.72130967962642TO-247-4
ASM056N120CTB742120056– /2.0/3.01230575579.617TO-263-7
ASM077N120PT4311200771.8/2.7/3.71130543511326TO-247-4
ASM078N120PT391200781.8/2.6/3.61340634692024TO-247-3
ASM078N120ACTB7391200781.8/2.6/3.61340634692024TO-263-7
ASM078N120APT4391200781.8/2.6/3.61340634692024TO-247-4
ASM180N120CTB71812001801.8/2.8/3.6550312.532816TO-263-7
ASM180N120APT41812001801.8/2.8/3.6550312.532816TO-247-4

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