Advanced Power Device

Significantly lower switching loss

Silicon carbide adopts JBS (Junction Barrier Schottky) structure of high-speed components, making them ideal for PFC circuits and inverters. Ultra-small reverse recovery time (impossible to achieve with silicon FRDs) enables high-speed switching. This minimizes reverse recovery charge (Qrr), reducing switching loss considerably and contributes to end-product miniaturization.

Features
  • Suitable for high-temperature operation
  • Suitable for high-frequency operation
  • High switching frequency
  • Low switching losses
  • Fast reverse recovery
  • High surge current capability
Applications
  • EV charging stations
  • DC/DC converters
  • Power factor correction
  • Power inverters
  • UPS systems

APD
Part Number
Ampere (A)Voltage (V)Forward Voltage (VF)
Typical (IF@20A)
Reverse Current
IR (Typ./uA)
Total Capacitive Charge
Q C (nC)
Total Power Dissipation
PD(TC=25°C/W)
Package
ASD20065PT2206501.451.242166TO-247-2
ASD40065PT406501.451.242150TO-247-3
ASD40065PT2406501.46196260TO-247-2
ASD20120PT22012001.42105313TO-247-2
ASD20S120PT22012001.3510105250TO-247-2
ASD30S120PT23012001.43152405TO-247-2
ASD30S120PT23012001.389155333TO-247-2
ASD40120PT24012001.453205536TO-247-2
ASD40120PT4012001.452108536TO-247-3
ASD50120PT25012001.381260454TO-247-2
ASD20Q120PT22012001.451093250TO-247-2
ASD40Q120PT4012001.4510106429TO-247-3

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