Advanced Power Device

Silicon carbide (SiC) semiconductors offer higher frequencies, lower losses, easier cooling, and better tolerance for high temperatures and voltages, making them the most efficient energy-saving materials for the power electronics market. APD’s advanced R&D and manufacturing have led to the development of SiC MOSFETs and JBS diodes with exceptional features, including high breakdown voltage, low power consumption, and high-speed switching not found in traditional silicon components. As demand for energy-efficient solutions grows, APD has successfully mass-produced the next generation of SiC power devices and modules.

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Automotive

APD's expertise in semiconductor technology is showcased in our automotive electronics applications. Our SiC semiconductor products, particularly SiC MOSFETs and JBS diodes, combine high performance with low losses. These products maintain superior performance even in high-temperature environments and are ideal for various automotive components, including on-board chargers (OBC), DC-DC converters, traction motor inverters, and supercharger stations.

APD's SiC technology is transforming the future of automotive electronics by delivering more efficient, safe, and reliable solutions.

On-Board Charger (OBC)

Level 1 and 2 chargers integrated into vehicles are known as on-board chargers (OBCs). For power design in OBCs, where space is limited, APD’s SiC ASD-Diodes and ASM-MOSFETs offer lower switching losses, faster switching speeds, and higher operating temperatures. These features enable higher power density and efficiency, meeting challenging efficiency standards.

APD’s advanced SiC ASM-MOSFET technology, combined with patented design processes, allows for Zero Voltage Switching (ZVS) and Zero Current Switching (ZCS), reducing switching losses and enhancing power converter efficiency and density.

DC-DC Converter

APD's SiC ASM-MOSFETs, featuring advanced MOSFET technology and packaging, deliver the lowest on-resistance and reduced power loss. Utilizing patented design processes, these SiC ASM-MOSFETs enable Zero Voltage Switching (ZVS) and Zero Current Switching (ZCS) in most applications, minimizing switching losses and increasing the efficiency and power density of power converters.

Traction Inverter

For designs requiring increased output power in limited system space, APD’s SiC products provide high power density and efficiency. APD's advanced SiC diode, MOSFET, and module packaging technologies offer the lowest on-resistance and reduced power loss, meeting the most challenging efficiency standards. Using APD's patented design technology, SiC diodes and MOSFETs achieve extremely low switching losses without external snubbers, significantly reducing the size and weight of equipment.

Super Charger Station

Level 3 chargers used in public charging stations, known as supercharger stations (SCS), benefit from APD's SiC ASD-Diodes and ASM-MOSFETs. These components offer faster switching speeds (up to 100 kHz) and lower on-resistance, enhancing efficiency. They support three-level operation, effectively reducing voltage stress on switching devices and shrinking filter inductors, providing high power density and efficient solutions that meet stringent efficiency standards.

Related Products

SiC Schottky Diodes

Significantly lower switching loss

SiC MOSFETs

High speed switching with low On-resistance

IGBTs

High-efficiency power control with low losses

SiC Power Modules

Switching losses reduced by up to 75%

For more details on product applications, please refer to technical support.

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